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| inchange semiconductor isc product specification isc silicon npn power transistor bdw51/a/b/c description collector current -i c = 15 a collector-emitter sustaining voltage- : v ceo(sus) = 45v(min)- bdw51; 60v(min)- bdw51a 80v(min)- BDW51B; 100v(min)- bdw51c complement to type bdw52/a/b/c applications designed for use in power linear and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit bdw51 45 bdw51a 60 BDW51B 80 v cbo collector-base voltage bdw51c 100 v bdw51 45 bdw51a 60 BDW51B 80 v ceo collector-emitter voltage bdw51c 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 15 a i cm collector current-peak 20 a i b b base current 7 a p c collector power dissipation @ t c =25 125 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.4 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor bdw51/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdw51 45 bdw51a 60 BDW51B 80 v ceo(sus) collector-emitter sustaining voltage bdw51c i c = 100ma; i b = 0 100 v v ce(sat)-1 collector-emitter saturation voltage i c = 5a; i b = 0.5a b 1.0 v v ce(sat)-2 collector-emitter saturation voltage i c = 10a; i b = 2.5a 3.0 v v be(sat) base-emitter saturation voltage i c = 10a; i b = 2.5a 2.5 v v be( on ) base-emitter on voltage i c = 5a; v ce = 4v 1.5 v bdw51 v cb = 45v; i e = 0 v cb = 45v; i e = 0; t c = 150 0.5 5.0 bdw51a v cb = 60v; i e = 0 v cb = 60v; i e = 0; t c = 150 0.5 5.0 BDW51B v cb = 80v; i e = 0 v cb = 80v; i e = 0; t c = 150 0.5 5.0 i cbo collector cutoff current bdw51c v cb = 100v; i e = 0 v cb = 100v; i e = 0; t c = 150 0.5 5.0 ma bdw51 v ce = 22v; i b = 0 b bdw51a v ce = 30v; i b = 0 b BDW51B v ce = 40v; i b = 0 b i ceo collector cutoff current bdw51c v ce = 50v; i b = 0 b 1.0 ma i ebo emitter cutoff current v eb = 5v; i c =0 2.0 ma h fe-1 dc current gain i c = 5a; v ce = 4v 20 150 h fe-2 dc current gain i c = 10a; v ce = 4v 5 f t current gain-bandwidth product i c = 0.5a; v ce = 4v 3 mhz isc website www.iscsemi.cn 2 |
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